Low dislocation density, high power InGaN laser diodes

被引：13

作者：

Perlin, P ^{[1
]}

Leszczyski, M ^{[1
]}

Prystawko, P ^{[1
]}

Wisniewski, P ^{[1
]}

Czernetzki, R ^{[1
]}

Skierbiszewski, C ^{[1
]}

Nowak, G ^{[1
]}

Purgal, W ^{[1
]}

Weyher, JL ^{[1
]}

Kamler, G ^{[1
]}

Borysiuk, J ^{[1
]}

Krysko, M ^{[1
]}

Sarzynski, M ^{[1
]}

Suski, T ^{[1
]}

Litwin-Staszewska, E ^{[1
]}

Dmowski, L ^{[1
]}

Franssen, G ^{[1
]}

Grzanka, S ^{[1
]}

Swietlik, T ^{[1
]}

Grzegory, I ^{[1
]}

Bockowski, M ^{[1
]}

Lucznik, B ^{[1
]}

Porowski, S ^{[1
]}

Gorczyca, L ^{[1
]}

Bering, A ^{[1
]}

Krupczynski, W ^{[1
]}

Makarowa, I ^{[1
]}

Wisniewska, R ^{[1
]}

Libura, A ^{[1
]}

机构：

[1] AGH Univ Technol, Krakow, Poland

来源：

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 2004年 / 9卷 / 03期

关键词：

D O I：

10.1557/S1092578300000387

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We used single crystals of GaN, obtained from high-pressure synthesis, as substrates for Metalorganics Vapor Phase Epitaxy growth of violet and UV laser diodes. The use of high-quality bulk GaN leads to the decrease of the dislocation density to the low level of 10(5) cm(-2), i.e. two orders of magnitude better than typical for the Epitaxial Lateral Overgrowth laser structures fabricated on sapphire. The low density and homogeneous distribution of defects in our structures enables the realization of broad stripe laser diodes. We demonstrate that our laser diodes, having 15 mum wide stripes, are able to emit 1.3-1.9 W per facet (50% reflectivity) in 30 ns long pulses. This result, which is among the best ever reported for nitride lasers, opens the path for the development of a new generation of high power laser diodes.

引用

页数：5

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