First-principles study on electronic structure and optical properties of Cu-doped β-Ga2O3

被引：47

作者：

Yan, Huiyu ^{[1
]}

Guo, Yanrui ^{[1
]}

Song, Qinggong ^{[1
]}

Chen, Yifei ^{[1
]}

机构：

[1] Civil Aviat Univ China, Coll Sci, Tianjin 300300, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2014年 / 434卷

基金：

中国国家自然科学基金;

关键词：

First-principles; Cu-doped beta-Ga2O3; Electronic structure; Optical properties; SOLAR-CELLS; THIN-FILMS;

D O I：

10.1016/j.physb.2013.11.024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic and optical properties of the Cu-doped and intrinsic beta-Ga2O3 are studied by using the first-principles calculation method. Results show that Cu-doped beta-Ga2O3 can be fabricated in experiments. Two acceptor impurity levels are introduced near the top of the valence band by Cu dopant, indicating that Cu-doped gallium oxide is a promising p-type semiconductor. Cu-doped beta-Ga2O3 can be used as intermediate band semiconductor in solar cell. Cu dopant induced 100% spin polarization near the Fermi level. The analysis results of optical properties reveal that Cu-doped beta-Ga2O3 is a promising potential candidate for p-type ultraviolet (UV) transparent semiconductor. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：181 / 184

页数：4

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