Controllable Chemical Vapor Deposition Growth of Two-Dimensional Heterostructures

被引:99
作者
Zhang, Tao [1 ]
Fu, Lei [1 ]
机构
[1] Wuhan Univ, Coll Chem & Mol Sci, Wuhan 430072, Hubei, Peoples R China
关键词
HEXAGONAL BORON-NITRIDE; DER-WAALS HETEROSTRUCTURES; VERTICALLY ALIGNED LAYERS; EPITAXIAL-GROWTH; INPLANE HETEROSTRUCTURES; MOS2/WS2; HETEROSTRUCTURES; LATERAL HETEROSTRUCTURES; HIGH-QUALITY; GRAPHENE HETEROSTRUCTURES; HETERO-NANOSTRUCTURES;
D O I
10.1016/j.chempr.2017.12.006
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional (2D) heterostructures, which are constructed via vertical stacking or lateral stitching of various 2D materials, have attracted considerable attention during the past 5 years. However, it is still a big challenge to achieve controllable construction of both lateral and vertical 2D heterostructures, which is considered to be an essential step toward further theoretical research and practical applications. Recently, chemical vapor deposition (CVD) has shown high controllability in the synthesis of various 2D materials, which has inspired intensive investigations into CVD growth of 2D heterostructures. Here, research progress in the controllable CVD growth of numerous 2D heterostructures is discussed. The review mainly covers three state-of-the-art strategies (temperature triggering, precursor design, and substrate engineering) for improving the controllability over 2D heterostructures. We conclude with the current challenges and future directions in this rapidly developing field.
引用
收藏
页码:671 / 689
页数:19
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