Fabrication and characterization of graphene derived from SiC

被引：8

作者：

Jia YuPing ^{[1
]}

Guo LiWei ^{[1
]}

Lu Wei ^{[1
]}

Guo Yu ^{[1
]}

Lin JingJing ^{[1
]}

Zhu KaiXing ^{[1
]}

Chen LianLian ^{[1
]}

Huang QingSong ^{[1
]}

Huang Jiao ^{[1
]}

Li ZhiLin ^{[1
]}

Chen XiaoLong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2013年 / 56卷 / 12期

基金：

中国国家自然科学基金;

关键词：

graphene; SiC; morphology; Raman; field emission; magnetism; EPITAXIAL GRAPHENE; FILMS; EXFOLIATION; NANOSHEETS; GRAPHITE; SHEETS;

D O I：

10.1007/s11433-013-5348-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using novel ideas for the fabrication of epitaxial graphene (EG) on SiC, two forms of graphene termed as vertical aligned graphene sheets (VAGS) and graphene covered SiC powder (GCSP) were derived, respectively, from SiC slices and SiC powder, aimed for applications in energy storage and photocatalysis. Herein, the fabrication procedures, morphology characteristics, some intrinsic physical properties and performances for applications in field effect transistor (FET) and cold cathode field emission source are revealed and analyzed based on the graphene materials. The EG on a 2-inch SiC (0001) showed an average sheet resistance about 720 Omega/square with a non-uniformity 7.2%. The FETs fabricated on the EG possessed a cutoff frequency 80 GHz. Based on the VAGS derived from a completely carbonized SiC slice, a magnetic phase diagram of graphene with irregular zigzag edges is also reported.

引用

页码：2386 / 2394

页数：9

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