Effects of Multi-Gates on Performance and Stability of Self-Aligned Coplanar a-IGZO TFTs

被引：0

作者：

Han, Jiung ^{[1
]}

Kang, Donghan

Jang, Jin

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

来源：

IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 1 | 2012年 / 19卷

关键词：

Amorphous indium-gallium-zinc-oxide (a-IGZO); Thin-film transistor (TFT); Self-aligned coplanar; Multi-gates; THIN-FILM TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the effects of multiple gates on the performance and stability of a-IGZO TFTs. The subthreshold region of transfer characteristics shift to negative gate voltage direction with increasing gate number, and the threshold voltage shift induced by positive gate bias stress decreases with increasing gate number.

引用

页码：413 / 416

页数：4

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