Cathode-Side Current Filaments in High-Voltage Power Diodes Beyond the SOA Limit

被引：29

作者：

Baburske, Roman ^{[1
]}

Niedernostheide, Franz-Josef ^{[1
]}

Lutz, Josef ^{[2
]}

Schulze, Hans-Joachim ^{[1
]}

Falck, Elmar ^{[1
]}

Bauer, Josef Georg ^{[1
]}

机构：

[1] Infineon Technol AG, D-85579 Neubiberg, Germany

[2] Tech Univ Chemnitz, Dept Elect Engn & Informat Technol, D-09126 Chemnitz, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 07期

关键词：

Destruction limit; dynamic avalanche; filament; power diode; reverse recovery; SOA; DYNAMIC AVALANCHE; BREAKDOWN; SILICON;

D O I：

10.1109/TED.2013.2264839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analysis of the plasma front velocities during turnoff of a power diode is used to explain the differences between the formation and the behavior of cathode-side and anode-side filaments. Device simulations show, how cathode-side filaments may trigger a thermal runaway at the end of a reverse-recovery period of diodes turned off with extremely high current rates operating the diode in a regime far away from the safe operating area. From the transient voltage curve, the analysis of the reverse-recovery charge as a function of the dc-link voltage and an analysis of the turnoff transients in the current-voltage phase space, it is, however, deduced that the appearance of a cathode-side filament by itself does not necessarily lead to diode destruction. The transformation of the initially avalanche-generated filaments into filaments that are essentially driven by thermal mechanism seems to be a further important condition for device destruction.

引用

页码：2308 / 2317

页数：10

共 22 条

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