Thermoelectric properties of Al-doped Mg2Si1-xSnx (x ≤ 0.1)

被引：95

作者：

Tani, Jun-ichi ^{[1
]}

Kido, Hiroyasu ^{[1
]}

机构：

[1] Osaka Municipal Tech Res Inst, Dept Elect Mat, Joto Ku, Osaka 5368553, Japan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2008年 / 466卷 / 1-2期

关键词：

lntermetallics; Thermoelectric materials; Electrical transport; Impurities in semiconductors;

D O I：

10.1016/j.jallcom.2007.11.029

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The thermoelectric properties of Al-doped Mg2Si1-xSnx(x = 0.0-0.1) [Mg2Si1-xSnxAl = 1:y (0.00 <= y <= 0.02)] fabricated by spark plasma sintering have been characterized by Hall effect measurements at 300 K and by measurements of electrical resistivity (rho), the Seebeck coefficient (S). and thermal conductivity (kappa) between 300 and 900K. Al-doped Mg2Si1-xSnx samples are n-type in the measured temperature range. By Al-doping, electron concentration is controlled up to 5.3 x 10(19) cm(-3) in the composition range 0.0 <= x <= 0.1. Al-doped Mg2Si0.9Sn0.1 shows a maximum value of the figure of merit ZT of 0.68 at 864 K, which is 6 times larger than that of nondopcd Mg2Si0.9Sn0.1. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：335 / 340

页数：6

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