Graphene Conductance Uniformity Mapping

被引:168
作者
Buron, Jonas D. [1 ,2 ]
Petersen, Dirch H. [2 ]
Boggild, Peter [2 ]
Cooke, David G. [3 ]
Hilke, Michael [3 ]
Sun, Jie [4 ]
Whiteway, Eric [3 ]
Nielsen, Peter F. [5 ]
Hansen, Ole [2 ,6 ]
Yurgens, August [4 ]
Jepsen, Peter U. [1 ]
机构
[1] Tech Univ Denmark, Dept Photon Engn, DK-2800 Lyngby, Denmark
[2] Tech Univ Denmark, Dept Micro & Nanotechnol, DK-2800 Lyngby, Denmark
[3] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada
[4] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
[5] Capres AS, DK-2800 Lyngby, Denmark
[6] Tech Univ Denmark, CINF, DK-2800 Lyngby, Denmark
基金
新加坡国家研究基金会; 加拿大自然科学与工程研究理事会;
关键词
Graphene; terahertz; micro four-point probe; metrology; imaging electrical characterization; noninvasive characterization; spectroscopy; SHEET RESISTANCE MEASUREMENT; TERAHERTZ; SPECTROSCOPY; CONDUCTIVITY; FILMS;
D O I
10.1021/nl301551a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate a combination of micro four-point probe (M4PP) and non-contact terahertz time-domain spectroscopy (THz-TDS) measurements for centimeter scale quantitative mapping of the sheet conductance of large area chemical vapor deposited graphene films. Dual configuration M4PP measurements, demonstrated on graphene for the first time, provide valuable statistical insight into the influence of microscale defects on the conductance, while THz-TDS has potential as a fast, non-contact metrology method for mapping of the spatially averaged nanoscopic conductance on wafer-scale graphene with scan times of less than a minute for a 4-in. wafer. The combination of M4PP and THz-TDS conductance measurements, supported by micro Raman spectroscopy and optical imaging, reveals that the film is electrically continuous on the nanoscopic scale with microscopic defects likely originating from the transfer process, dominating the microscale conductance of the investigated graphene film.
引用
收藏
页码:5074 / 5081
页数:8
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