A comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells

被引：2

作者：

Park, Il-Kyu ^{[1
]}

Kwon, Min-Ki ^{[2
]}

Park, Seong-Ju ^{[3
]}

机构：

[1] Yeungnam Univ, Dept Elect Engn, Gyongsan 712749, South Korea

[2] Chosun Univ, Dept Photon Engn, Kwangju 501759, South Korea

[3] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 60卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Quantum wells; Quantum dots; Light-emitting diodes; InGaN;

D O I：

10.3938/jkps.60.1666

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A comparative investigation of the recombination efficiency of green-emitting InGaN quantum dots (QDs) and quantum wells (QWs) is reported in this paper. Optical investigations using temperature dependent photoluminescence (PL) results showed that the internal quantum efficiency of InGaN QDs at room temperature was 8.7 times larger than that found for InGaN QWs because they provided dislocation-free recombination sites for the electrical charge carriers. The excitation-power-dependent PL and electroluminescence results showed that the effect of the polarization-induced electric field on the recombination process of electrical charge carriers in the QDs was negligibly small whereas it was dominant in the QWs. These results indicate that InGaN QDs are more beneficial than QWs in improving the luminescence efficiency of LEDs in the green spectral range.

引用

页码：1666 / 1670

页数：5

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