The circular polarization inversion in δ⟨Mn⟩/InGaAs/GaAs light-emitting diodes

被引：8

作者：

Dorokhin, M. V. ^{[1
]}

Danilov, Yu. A. ^{[1
]}

Zvonkov, B. N. ^{[1
]}

Gonzalez Balanta, M. A. ^{[2
]}

Brasil, M. J. S. P. ^{[2
]}

Iikawa, F. ^{[2
]}

Mendes, U. C. ^{[2
]}

Brum, J. A. ^{[2
]}

Demina, P. B. ^{[1
]}

Malysheva, E. I. ^{[1
]}

Zdoroveyshchev, A. V. ^{[1
]}

Kudrin, A. V. ^{[1
]}

机构：

[1] Lobachevsky State Univ Nizhni Novgorod, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia

[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP, Brazil

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 04期

基金：

俄罗斯基础研究基金会; 巴西圣保罗研究基金会;

关键词：

III-V semiconductors - Light emitting diodes - Magnetic field effects - Semiconducting indium - Light - Gallium arsenide - Semiconducting indium gallium arsenide - Spin polarization - Semiconductor quantum wells;

D O I：

10.1063/1.4927645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated light-emitting diodes consisting of an InGaAs/GaAs quantum well adjacent to a ferromagnetic delta < Mn >-layer. The magnetic field-dependent circular polarization obtained from both photo- and electroluminescence shows an unusual sign inversion depending on the growth parameters that can be explained by an interplay of the Zeeman splitting and Mn-hole interaction effects. Our results can help to understand the origin and control of the spin polarization on Mn doped GaAs structures, a fundamental step for the development of Mn-based spintronic devices. (C) 2015 AIP Publishing LLC.

引用

页数：4

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