Enhanced Field Emitter Base on Indium-Doped ZnO Nanostructures by Aqueous Solution

被引：12
|
作者：
Liu, Y. H. [1 ,2 ]
Chang, S. J. [1 ,2 ]
Young, S. J. [3 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[3] Natl Formosa Univ, Dept Elect Engn, Yunlin 632, Taiwan
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2016年 / 5卷 / 12期
关键词：
LOW-TEMPERATURE; EMISSION PERFORMANCE; NANORODS; GROWTH; ARRAYS; TRANSPARENT; SUBSTRATE;
D O I：
10.1149/2.0101612jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, indium doped ZnO (IZO) nanostructures were fabricated successfully on a glass substrate. It was found that the IZO nanostructures grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The composition of the doped zinc oxide (ZnO) nanostructures was confirmed by X-ray diffraction (XRD) and energy dispersive X-ray. The turn-on fields of ZnO and IZO nanostructures were 4.21 and 3.86 V/mu m, and field enhancement factors (beta) were 2695 and 5015, respectively. These results show that the field emission properties of the IZO nanostructures are better than those of ZnO nanostructures. (C) 2016 The Electrochemical Society. All rights reserved.
引用
收藏
页码：R203 / R205
页数：3
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