Planar Gunn Diode Characterisation and Resonator Elements to Realise Oscillator Circuits

被引:0
|
作者
Maricar, M. Ismaeel [1 ]
Glover, J. [1 ]
Evans, G. A. [1 ]
Khalid, Ata [2 ]
Papageorgiou, V. [2 ]
Chong, Li [2 ]
Dunn, G. [3 ]
Stephen, A. [3 ]
Montes Bajo, M. [4 ]
Kuball, M. [4 ]
Cumming, D. R. S. [2 ]
Oxley, C. H. [1 ]
机构
[1] De Montfort Univ, Leicester LE1 9BH, Leics, England
[2] Univ Glasgow, Glasgow, Lanark, Scotland
[3] Univ Aberdeen, Aberdeen, Scotland
[4] Univ Bristol, Bristol, Avon, England
来源
2013 INTERNATIONAL CONFERENCE ON ADVANCED NANOMATERIALS AND EMERGING ENGINEERING TECHNOLOGIES (ICANMEET) | 2013年
基金
英国工程与自然科学研究理事会;
关键词
Planar Gunn diode; thermal microscope; radial resonators; diamond resonator;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper describes the planar Gunn diode, which is a device well suited to provide milli-metric and tera-hertz sources using microwave monolithic integrated circuit technologies. Different planar Gunn electrode geometries are described along with DC, RE and thermal characterisation. To realize the planar high frequency sources there is requirement for high frequency planar resonators, the paper will describe both the radial and new diamond shaped geometries.
引用
收藏
页码:597 / 601
页数:5
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