Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

被引：68

作者：

Riedel, Gernot J. ^{[1
]}

Pomeroy, James W. ^{[1
]}

Hilton, Keith P. ^{[2
]}

Maclean, Jessica O. ^{[2
]}

Wallis, David J. ^{[2
]}

Uren, Michael J. ^{[2
]}

Martin, Trevor ^{[2
]}

Forsberg, Urban ^{[4
]}

Lundskog, Anders ^{[4
]}

Kakanakova-Georgieva, Anelia ^{[4
]}

Pozina, Galia ^{[4
]}

Janzen, Erik ^{[4
]}

Lossy, Richard ^{[3
]}

Pazirandeh, Reza ^{[3
]}

Brunner, Frank ^{[3
]}

Wuerfl, Joachim ^{[3
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] QinetiQ Ltd, Malvern WR14 3PS, Worcs, England

[3] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

[4] Linkoping Univ, Dept Phys Chem & Biol, S-58246 Linkoping, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

CVD; epitaxial layers; FETs; gallium compounds; MODFETs; resistance heating; RAMAN-SPECTROSCOPY; TEMPERATURE; GAN; PROBE;

D O I：

10.1109/LED.2008.2010340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AIN-NL to a hot-wall MOCVD-grown AIN-NL reduces NL TBR by 25%, resulting in similar to 10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.

引用

页码：103 / 106

页数：4

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