Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots

被引：2

作者：

Nabavi, E. ^{[1
]}

Badcock, T. J. ^{[2
]}

Nuytten, T. ^{[3
]}

Liu, H. Y. ^{[4
]}

Hopkinson, M. ^{[5
]}

Moshchalkov, V. V. ^{[3
]}

Mowbray, D. J. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Manchester, Photon Sci Inst, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

[3] Katholieke Univ Leuven, INPAC, Pulsed Fields Grp, B-3001 Louvain, Belgium

[4] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

[5] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

aluminium compounds; annealing; gallium arsenide; III-V semiconductors; indium compounds; magneto-optical effects; optical materials; photoluminescence; self-assembly; semiconductor lasers; semiconductor quantum dots; spectral line shift; THRESHOLD CURRENT-DENSITY; LASERS; MAGNETOPHOTOLUMINESCENCE; GROWTH; DEPENDENCE; ELECTRON;

D O I：

10.1063/1.3082012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a magneto-optical study of InAs-InGaAs-GaAs self-assembled quantum dots (QDs) subjected to post-growth thermal annealing at different temperatures. At low temperatures annealing strongly affects the bimodal distribution of QDs; at higher temperatures a strong blueshift of the emission occurs. Magnetophotoluminescence reveals that the annealing increases the QD size, with a larger effect occurring along the growth axis, and decreases the carrier effective masses. The main contribution to the blueshift is deduced to be an increase in the average Ga composition of the QDs. The inadvertent annealing which occurs during the growth of the upper AlGaAs cladding layer in laser structures is also studied.

引用

页数：6

共 29 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[3] Electronic and structural properties of interdiffused self-assembled quantum dots from magneto-photoluminescence [J].

Awirothananon, S ;

Sheng, WD ;

Babinski, A ;

Studenikin, S ;

Raymond, S ;

Sachrajda, A ;

Potemski, M ;

Fafard, S ;

Ortner, G ;

Bayer, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B) :2088-2092

[4] Low threshold current density and negative characteristic temperature 1.3 μm InAs self-assembled quantum dot lasers [J].

Badcock, T. J. ;

Royce, R. J. ;

Mowbray, D. J. ;

Skolnick, M. S. ;

Liu, H. Y. ;

Hopkinson, M. ;

Groom, K. M. ;

Jiang, Q. .

APPLIED PHYSICS LETTERS, 2007, 90 (11)

[5] Intermixing in quantum-dot ensembles with sharp adjustable shells [J].

Fafard, S ;

Allen, CN .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2374-2376

[6] Very-low-threshold current density continuous-wave quantum-dot laser diode [J].

Freisem, S. ;

Ozgur, G. ;

Shavritranuruk, K. ;

Chen, H. ;

Deppe, D. G. .

ELECTRONICS LETTERS, 2008, 44 (11) :679-U32

[7] Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots [J].

Fry, PW ;

Itskevich, IE ;

Mowbray, DJ ;

Skolnick, MS ;

Finley, JJ ;

Barker, JA ;

O'Reilly, EP ;

Wilson, LR ;

Larkin, IA ;

Maksym, PA ;

Hopkinson, M ;

Al-Khafaji, M ;

David, JPR ;

Cullis, AG ;

Hill, G ;

Clark, JC .

PHYSICAL REVIEW LETTERS, 2000, 84 (04) :733-736

[8] Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots [J].

Godefroo, S ;

Maes, J ;

Hayne, M ;

Moshchalkov, VV ;

Henini, M ;

Pulizzi, F ;

Patanè, A ;

Eaves, L .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) :2535-2539

[9] Electron and hole confinement in stacked self-assembled InP quantum dots [J].

Hayne, M ;

Provoost, R ;

Zundel, MK ;

Manz, YL ;

Eberl, K ;

Moshchalkov, VV .

PHYSICAL REVIEW B, 2000, 62 (15) :10324-10328

[10] Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing [J].

Kosogov, AO ;

Werner, P ;

Gosele, U ;

Ledentsov, NN ;

Bimberg, D ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Bert, NA ;

Alferov, ZI .

APPLIED PHYSICS LETTERS, 1996, 69 (20) :3072-3074

← 1 2 3 →