Intrinsic Defects, Fluctuations of the Local Shape, and the Photo-Oxidation of Black Phosphorus

被引:69
作者
Utt, Kainen L. [1 ]
Rivero, Pablo [1 ]
Mehboudi, Mehrshad [1 ]
Harriss, Edmund O. [2 ]
Borunda, Mario F. [3 ]
Pacheco SanJuan, Alejandro A. [4 ]
Barraza-Lopez, Salvador [1 ]
机构
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
[2] Univ Arkansas, Dept Math Sci, Fayetteville, AR 72701 USA
[3] Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA
[4] Univ Norte, Dept Ingn Mecan, Barranquilla, Colombia
关键词
STRAIN; SEMICONDUCTOR; PASSIVATION; CHEMISTRY; BANDGAP;
D O I
10.1021/acscentsci.5b00244
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Black phosphorus is a monatomic semiconducting layered material that degrades exothermically in the presence of light and ambient contaminants. Its degradation dynamics remain largely unknown. Even before degradation, local-probe studies indicate non-negligible local curvature-through a nonconstant height distribution-due to the unavoidable presence of intrinsic defects. We establish that these intrinsic defects are photo-oxidation sites because they lower the chemisorption barrier of ideal black phosphorus (> 10 eV and out of visible-range light excitations) right into the visible and ultraviolet range (1.6 to 6.8 eV), thus enabling photoinduced oxidation and dissociation of oxygen dimers. A full characterization of the material's shape and of its electronic properties at the early stages of the oxidation process is presented as well. This study thus provides fundamental insights into the degradation dynamics of this novel layered material.
引用
收藏
页码:320 / 327
页数:8
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