A light-controllable topological transistor based on quantum tunneling of anomalous topological edge states

被引：2

作者：

Wang, Lekang ^{[1
]}

Guo, Lingling ^{[1
]}

Zhang, Qingtian ^{[1
,2
]}

机构：

[1] Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China

[2] Guangdong Univ Technol, Guangdong Prov Key Lab Informat Photon Technol, Guangzhou 510006, Guangdong, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 11期

基金：

中国国家自然科学基金;

关键词：

topological transistor; quantum tunneling; anomalous hall effects; graphene; INSULATOR;

D O I：

10.35848/1882-0786/ac9a22

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Motivated by the recent observation of anomalous Hall effects in graphene [Nat. Phys. 16, 38-41 (2020)], we study the tunneling transport properties of topological edge states in irradiated graphene and graphene-like materials. We investigate the quantum tunneling transport in a structure: laser-irradiated graphene/gapped graphene/laser-irradiated graphene. We find that electrons cannot transport through the device because of the band gap, but electrons will tunnel through the device when anomalous topological edge states are induced by a laser. We predict a topological transistor based on the tunneling transport of topological edge states in irradiated graphene-like materials.

引用

页数：5

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