Tunnel anisotropic magnetoresistance in CoFeB|MgO|Ta junctions

被引：11

作者：

Hatanaka, S. ^{[1
]}

Miwa, S. ^{[1
]}

Matsuda, K. ^{[1
]}

Nawaoka, K. ^{[1
]}

Tanaka, K. ^{[1
]}

Morishita, H. ^{[1
]}

Goto, M. ^{[1
]}

Mizuochi, N. ^{[1
]}

Shinjo, T. ^{[1
]}

Suzuki, Y. ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 08期

关键词：

Tunnel junctions - Anisotropy - Spin polarization - Iron compounds - Magnetic devices - Tunnelling magnetoresistance - Cobalt compounds;

D O I：

10.1063/1.4929682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We found that CoFeB[MgO]Ta tunnel junctions exhibit tunnel anisotropic magnetoresistance (TAMR) at room temperature. The tunnel junctions exhibit positive magnetoresistance with the application of a magnetic field normal to the film plane. The dependencies on the applied magnetic field angle and MgO thickness reveal that the magnetoresistance originates from the TAMR, caused by the spin polarization and the spin-orbit interaction at the CoFeB vertical bar MgO interface. We also found that the TAMR can be used to detect ferromagnetic resonance in the CoFeB. This detection method could be useful for the characterization of nanomagnets that are free from the spin-transfer effect and the stray field of a reference layer, unlike conventional magnetic tunnel junctions. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 20 条

[1] TIGHT-BINDING APPROACH TO THE ORBITAL MAGNETIC-MOMENT AND MAGNETOCRYSTALLINE ANISOTROPY OF TRANSITION-METAL MONOLAYERS [J].

BRUNO, P .

PHYSICAL REVIEW B, 1989, 39 (01) :865-868

[2] Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures [J].

Endo, M. ;

Kanai, S. ;

Ikeda, S. ;

Matsukura, F. ;

Ohno, H. .

APPLIED PHYSICS LETTERS, 2010, 96 (21)

[3] Bias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers [J].

Gao, Li ;

Jiang, Xin ;

Yang, See-Hun ;

Burton, J. D. ;

Tsymbal, Evgeny Y. ;

Parkin, Stuart S. P. .

PHYSICAL REVIEW LETTERS, 2007, 99 (22)

[4] Tunneling anisotropic magnetoresistance:: A spin-valve-like tunnel magnetoresistance using a single magnetic layer -: art. no. 117203 [J].

Gould, C ;

Rüster, C ;

Jungwirth, T ;

Girgis, E ;

Schott, GM ;

Giraud, R ;

Brunner, K ;

Schmidt, G ;

Molenkamp, LW .

PHYSICAL REVIEW LETTERS, 2004, 93 (11) :117203-1

[5]

Ikeda S, 2010, NAT MATER, V9, P721, DOI [10.1038/NMAT2804, 10.1038/nmat2804]

[6] Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions [J].

Manchon, A. .

PHYSICAL REVIEW B, 2011, 83 (17)

[7]

Maruyama T, 2009, NAT NANOTECHNOL, V4, P158, DOI [10.1038/nnano.2008.406, 10.1038/NNANO.2008.406]

[8]

Miwa S, 2014, NAT MATER, V13, P50, DOI [10.1038/nmat3778, 10.1038/NMAT3778]

[9] Nonlinear thermal effect on sub-gigahertz ferromagnetic resonance in magnetic tunnel junction [J].

Miwa, S. ;

Fujii, Y. ;

Kubota, H. ;

Yakushiji, K. ;

Ishibashi, S. ;

Saruya, T. ;

Fukushima, A. ;

Yuasa, S. ;

Suzuki, Y. .

APPLIED PHYSICS LETTERS, 2013, 103 (04)

[10]

Nozaki T, 2012, NAT PHYS, V8, P491, DOI [10.1038/nphys2298, 10.1038/NPHYS2298]

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