Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices

被引：117

作者：

Garcia, Andrei G. F. ^{[1
]}

Neumann, Michael ^{[2
]}

Amet, Francois ^{[2
]}

Williams, James R. ^{[2
]}

Watanabe, Kenji ^{[3
]}

Taniguchi, Takashi ^{[3
]}

Goldhaber-Gordon, David ^{[2
]}

机构：

[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

NANO LETTERS | 2012年 / 12卷 / 09期

关键词：

Boron nitride; Raman; organic residue removal; graphene; SPECTROSCOPY; SCATTERING; FIELD;

D O I：

10.1021/nl3011726

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Hexagonal boron nitride (h-BN) films have attracted, considerable interest as substrates for graphene. (Dean, C. R et al. Nat. Nanotechnol. 2010, 5, 722-6; Wang, H. et al. Electron Device Lett. 2011, 32, 1209-1211; Sanchez-Yamagishi, J. et al. Phys. Rev. Lett, 2012, 108, 1-5.) We study the presence of organic contaminants introduced by standard lithography and substrate transfer processing on h-BN films exfoliated on silicon oxide substrates. Exposure to photoresist processing adds a large broad luminescence peak to the Raman spectrum of the h-BN flake. This signal persists through typical furnace annealing recipes (Ar/H-2). A recipe that successfully removes organic contaminants and results in clean h-BN flakes involves treatment in Ar/O-2 at 500 degrees C.

引用

页码：4449 / 4454

页数：6

共 18 条

[1] Raman spectroscopy of single-wall boron nitride nanotubes [J].

Arenal, R. ;

Ferrari, A. C. ;

Reich, S. ;

Wirtz, L. ;

Mevellec, J. -Y. ;

Lefrant, S. ;

Rubio, A. ;

Loiseau, A. .

NANO LETTERS, 2006, 6 (08) :1812-1816

[2]

Babich I.L., 1974, Theoretical and Experimental Chemistry, V8, P594

[3] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].

Britnell, L. ;

Gorbachev, R. V. ;

Jalil, R. ;

Belle, B. D. ;

Schedin, F. ;

Mishchenko, A. ;

Georgiou, T. ;

Katsnelson, M. I. ;

Eaves, L. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Leist, J. ;

Geim, A. K. ;

Novoselov, K. S. ;

Ponomarenko, L. A. .

SCIENCE, 2012, 335 (6071) :947-950

[4] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[5] Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy [J].

Decker, Regis ;

Wang, Yang ;

Brar, Victor W. ;

Regan, William ;

Tsai, Hsin-Zon ;

Wu, Qiong ;

Gannett, William ;

Zettl, Alex ;

Crommie, Michael F. .

NANO LETTERS, 2011, 11 (06) :2291-2295

[6] Chemical, microstructural and thermal analyses of a naphthalene-derived mesophase pitch [J].

Dumont, M ;

Chollon, G ;

Dourges, MA ;

Pailler, R ;

Bourrat, X ;

Naslain, R ;

Bruneel, JL ;

Couzi, M .

CARBON, 2002, 40 (09) :1475-1486

[7] Broken-symmetry states and divergent resistance in suspended bilayer graphene [J].

Feldman, Benjamin E. ;

Martin, Jens ;

Yacoby, Amir .

NATURE PHYSICS, 2009, 5 (12) :889-893

[8] Interpretation of Raman spectra of disordered and amorphous carbon [J].

Ferrari, AC ;

Robertson, J .

PHYSICAL REVIEW B, 2000, 61 (20) :14095-14107

[9] Hunting for Monolayer Boron Nitride: Optical and Raman Signatures [J].

Gorbachev, Roman V. ;

Riaz, Ibtsam ;

Nair, Rahul R. ;

Jalil, Rashid ;

Britnell, Liam ;

Belle, Branson D. ;

Hill, Ernie W. ;

Novoselov, Kostya S. ;

Watanabe, Kenji ;

Taniguchi, Takashi ;

Geim, Andre K. ;

Blake, Peter .

SMALL, 2011, 7 (04) :465-468

[10] Carrier transport in two-dimensional graphene layers [J].

Hwang, E. H. ;

Adam, S. ;

Das Sarma, S. .

PHYSICAL REVIEW LETTERS, 2007, 98 (18)

← 1 2 →