Tetragonal 3YSZ (3 mol% yttria-stabilized zirconia) nanoparticles were synthesized at temperature as low as 200 degrees C through a glycothermal reaction using coprecipitated amorphous hydrous gel of ZrCl4 and YCl3 center dot 6H(2)O as precursors and 1,4-butanediol as solvent. XRD and TEM data support that glycothermal processing method provides a simple low temperature route for producing highly crystallized tetragonal ZrO2 nanoparticles without mineralizers, which could also be extended to other system. Raman analysis also indicated that 3YSZ nanoparticles synthesized in glycothermal condition had tetragonal phase without any trace of monoclinic phase. The as-prepared 3YSZ nanoparticles have spherical morphology with an average crystal size of 7-10 nm and agglomerated into spherical shape with a diameter of about 100-200 nm. The tetragonal phase remained stable with heat treatment when the calcinations of the as-synthesized powder were carried out from 400 to 1400 degrees C. The combination of uniform glycothemally-synthesized tetragonal 3YSZ nano-powder and two-step sintering can suppress grain boundary migration but not affect grain boundary diffusion without long annealing period. Fine-grained microstructure with 100-500 nm was obtained without abnormal growth although the pellet was fully dense and had 98.1% of the theoretical density at 1400 degrees C. The pellets sintered at 1350 and 1400 degrees C exhibit activation energies for conduction in range 0.84 eV, which are close to the values usually found for zirconia-based solid electrolytes. (c) 2012 Elsevier B.V. All rights reserved.
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Shi, Zhenyu
Gao, Haibo
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Gao, Haibo
Wang, Xiaoqing
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Wang, Xiaoqing
Li, Chengyuan
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Li, Chengyuan
Wang, Wencong
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Wang, Wencong
Hong, Zhanglian
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Zhejiang Univ, Res Ctr Near Space Aircraft Technol, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
Hong, Zhanglian
Zhi, Mingjia
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Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
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Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan
Tokyo Univ Sci, Fac Sci, Dept Appl Phys, Tokyo 1258585, JapanNatl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan
Etoh, Daiki
Tsuchiya, Takashi
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Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan
Tokyo Univ Sci, Fac Sci, Dept Appl Phys, Tokyo 1258585, JapanNatl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan
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Bharathiar Univ, Coimbatore 641046, Tamil Nadu, India
Govt Arts Coll, Dept Phys, Udumalpet 642126, IndiaBharathiar Univ, Coimbatore 641046, Tamil Nadu, India
Prakashbabu, D.
Krishna, R. Hari
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MS Ramaiah Inst Technol, Dept Chem, Bangalore 560054, Karnataka, IndiaBharathiar Univ, Coimbatore 641046, Tamil Nadu, India
Krishna, R. Hari
Nagabhushana, B. M.
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MS Ramaiah Inst Technol, Dept Chem, Bangalore 560054, Karnataka, IndiaBharathiar Univ, Coimbatore 641046, Tamil Nadu, India
Nagabhushana, B. M.
Nagabhushana, H.
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Tumkur Univ, CNR Rao Ctr Nano Res, Tumkur 572103, IndiaBharathiar Univ, Coimbatore 641046, Tamil Nadu, India
Nagabhushana, H.
Shivakumara, C.
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Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, IndiaBharathiar Univ, Coimbatore 641046, Tamil Nadu, India
Shivakumara, C.
Chakradar, R. P. S.
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CSIR, Natl Aerosp Lab, Bangalore 560017, Karnataka, IndiaBharathiar Univ, Coimbatore 641046, Tamil Nadu, India
Chakradar, R. P. S.
Ramalingam, H. B.
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Govt Arts Coll, Dept Phys, Udumalpet 642126, IndiaBharathiar Univ, Coimbatore 641046, Tamil Nadu, India
Ramalingam, H. B.
Sharma, S. C.
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BMS Inst Technol, Dept Mech Engn, Bangalore 560064, Karnataka, IndiaBharathiar Univ, Coimbatore 641046, Tamil Nadu, India
Sharma, S. C.
Chandramohan, R.
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Sevugan Annamalai Coll, Dept Phys, Devakottai 630303, IndiaBharathiar Univ, Coimbatore 641046, Tamil Nadu, India