High-power AlGaN/GaN FET-Based VCO sources

被引：0
|
作者：
Shealy, JB [1 ]
Smart, JA [1 ]
Shealy, JR [1 ]
机构：
[1] RF Nitro Commun Inc, Charlotte, NC 28269 USA
来源：
2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first report of multi-watt AlGaN/GaN FET-based voltage-controlled oscillators (VCO's) with high efficiency is presented. Varactor-tuned oscillators implemented using distributed networks oscillate at 3 GHz with high output power (2.7 w), high efficiency (27%), high supply voltage range (3.5 V to 30 V) and high tuning bandwidth (13%) over a control voltage range from I to 9 V. The measured output power and circuit efficiency are examined as a function of supply voltage. These results indicate high-power AlGaN/GaN-based VCO's may he used as high-efficiency sources for radio communications.
引用
收藏
页码：1427 / 1430
页数：4
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