MOD Derived Pyrochlore Films as Buffer Layer for All-Chemical YBCO Coated Conductors

被引:16
作者
Augieri, Andrea [1 ]
Vannozzi, Angelo [1 ]
Mancini, Rita [1 ]
Angrisani, Achille Armenio [1 ]
Fabbri, Fabio [1 ]
Galluzzi, Valentina [1 ]
Rufoloni, Alessandro [1 ]
Rizzo, Francesco [1 ]
Mancini, Antonella [1 ]
Celentano, Giuseppe [1 ]
Colantoni, Ivan [2 ]
Davoli, Ivan [2 ]
Pompeo, Nicola [3 ]
Sotgiu, Giovanni [4 ]
Silva, Enrico [3 ]
机构
[1] ENEA, I-00044 Rome, Italy
[2] Univ Roma Tor Vergata, Dept Phys, I-00133 Rome, Italy
[3] Univ Roma Tre, Dept Phys, I-00146 Rome, Italy
[4] Univ Roma Tre, Dept Engn, I-00146 Rome, Italy
关键词
Buffer layers; chemical solution deposition (CSD) films; coated conductors; lanthanum zirconate; YBCO; SOLUTION DEPOSITION;
D O I
10.1109/TASC.2012.2234175
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a detailed study performed on La2Zr2O7 pyrochlore material grown by the metal-organic decomposition method as buffer layers for YBa2Cu3O7-x (YBCO) coated conductors. High-quality epitaxial LZO thin films have been obtained on single crystal (SC) and Ni-5% at. W substrates. In order to evaluate structural and morphological properties, films have been characterized by means of X-ray diffraction analyses, atomic force microscopy, and scanning electron microscopy. Precursor solutions and heat treatments have been studied by thermogravimetric analyses and infrared spectra with the aim of optimizing the annealing process. Thin films of YBCO have been deposited by pulsed laser ablation on this buffer layer. The best results obtained on SC showed YBCO films with critical temperature values above 90 K, high self-field critical current density values (J(c) > 1 MA/cm(2)), and high irreversibility field values (8.3 T) at 77 K together with a rather high depinning frequency nu(p) (0.5 T, 77 K) > 44 GHz as determined at microwaves. The best results on Ni-5%at.W has been obtained introducing in the heat treatment a pyrolysis process at low temperature in air in order to remove the residual organic part of the precursor solution.
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页数:5
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