High-Performance and Low-Power Rewritable SiOx 1 kbit One Diode-One Resistor Crossbar Memory Array

被引：65
作者：
Wang, Gunuk [1 ,4 ]
Lauchner, Adam C. [2 ]
Lin, Jian [3 ,4 ]
Natelson, Douglas [4 ,5 ]
Palem, Krishna V. [6 ]
Tour, James M. [1 ,3 ,4 ,6 ]
机构：
[1] Rice Univ, Dept Chem, Houston, TX 77005 USA
[2] Rice Univ, Appl Phys Program, Houston, TX 77005 USA
[3] Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77005 USA
[4] Rice Univ, Smalley Inst Nanoscale Sci & Technol, Houston, TX 77005 USA
[5] Rice Univ, Dept Phys & Astron, Dept Elect & Comp Engn, Houston, TX 77005 USA
[6] Rice Univ, Dept Comp Sci, Houston, TX 77005 USA
来源：
ADVANCED MATERIALS | 2013年 / 25卷 / 34期
关键词：
silicon oxides; non-volatile memory; one diode-one resistor; HIGH-DENSITY; OXIDE; DEVICES; NANOCROSSBAR; SWITCHES;
D O I：
10.1002/adma.201302047
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx-based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：4789 / 4793
页数：5
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