Demonstration of an erbium-doped microsphere laser on a silicon chip

被引:30
作者
Fan, Huibo [1 ]
Hua, Shiyue [1 ]
Jiang, Xiaoshun [1 ]
Xiao, Min [1 ,2 ]
机构
[1] Nanjing Univ, Sch Phys, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
基金
中国国家自然科学基金;
关键词
TELLURITE GLASS MICROSPHERE; FIBER-TAPER; MICROCAVITY;
D O I
10.1088/1612-2011/10/10/105809
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate a low-threshold microsphere laser on a silicon chip, fabricated from erbium-doped silica sol-gel film. Single-longitudinal mode lasing emission is observed from a 37 mu m diameter microsphere cavity with an erbium ion concentration of 2 x 10(19) cm(-3). The measured lasing threshold of the silica microsphere laser is as low as 4.8 mu W.
引用
收藏
页数:4
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