Self-Powered Pressure- and Vibration-Sensitive Tactile Sensors for Learning Technique-Based Neural Finger Skin
被引:151
作者:
Chun, Sungwoo
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Sungkyunkwan Univ, Dept SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, Gyeonggi Do, South Korea
Sungkyunkwan Univ, Sch Chem Engn, Suwon 16419, Gyeonggi Do, South KoreaSungkyunkwan Univ, Dept SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, Gyeonggi Do, South Korea
Chun, Sungwoo
[1
,2
]
Son, Wonkyeong
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DGIST, Dept Smart Text Convergence Res, Daegu 42988, South KoreaSungkyunkwan Univ, Dept SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, Gyeonggi Do, South Korea
Son, Wonkyeong
[3
]
Kim, Haeyeon
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Korea Inst Ind Technol, Adv Proc & Mat R&D Grp, Incheon 21999, South KoreaSungkyunkwan Univ, Dept SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, Gyeonggi Do, South Korea
Kim, Haeyeon
[4
]
Lim, Sang Kyoo
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DGIST, Dept Smart Text Convergence Res, Daegu 42988, South KoreaSungkyunkwan Univ, Dept SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, Gyeonggi Do, South Korea
Lim, Sang Kyoo
[3
]
Pang, Changhyun
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机构:
Sungkyunkwan Univ, Dept SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, Gyeonggi Do, South Korea
Sungkyunkwan Univ, Sch Chem Engn, Suwon 16419, Gyeonggi Do, South KoreaSungkyunkwan Univ, Dept SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, Gyeonggi Do, South Korea
Pang, Changhyun
[1
,2
]
Choi, Changsoon
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机构:
DGIST, Dept Smart Text Convergence Res, Daegu 42988, South KoreaSungkyunkwan Univ, Dept SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, Gyeonggi Do, South Korea
Choi, Changsoon
[3
]
机构:
[1] Sungkyunkwan Univ, Dept SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, Gyeonggi Do, South Korea
[2] Sungkyunkwan Univ, Sch Chem Engn, Suwon 16419, Gyeonggi Do, South Korea
[3] DGIST, Dept Smart Text Convergence Res, Daegu 42988, South Korea
[4] Korea Inst Ind Technol, Adv Proc & Mat R&D Grp, Incheon 21999, South Korea
Finger skin electronics are essential for realizing humanoid soft robots and/or medical applications that are very similar to human appendages. A selective sensitivity to pressure and vibration that are indispensable for tactile sensing is highly desirable for mimicking sensory mechanoreceptors in skin. Additionally, for a human machine interaction, output signals of a skin sensor should be highly correlated to human neural spike signals. As a demonstration of fully mimicking the skin of a human finger, we propose a self-powered flexible neural tactile sensor (NTS) that mimics all the functions of human finger skin and that is selectively and sensitively activated by either pressure or vibration stimuli with laminated independent sensor elements. A sensor array of ultrahigh-density pressure (20 x 20 pixels on 4 cm(2)) of interlocked percolative graphene films is fabricated to detect pressure and its distribution by mimicking slow adaptive (SA) mechanoreceptors in human skin. A triboelectric nanogenerator (TENG) was laminated on the sensor array to detect high-frequency vibrations like fast adaptive (FA) mechanoreceptors, as well as produce electric power by itself. Importantly, each output signal for the SA- and FA-mimicking sensors was very similar to real neural spike signals produced by SA and FA mechanoreceptors in human skin, thus making it easy to convert the sensor signals into neural signals that can be perceived by humans. By introducing microline patterns on the top surface of the NTS to mimic structural and functional properties of a human fingerprint, the integrated NTS device was capable of classifying 12 fabrics possessing complex patterns with 99.1% classification accuracy.
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Chen, Jun
;
Zhu, Guang
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Zhu, Guang
;
Yang, Weiqing
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Yang, Weiqing
;
Jing, Qingshen
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Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Jing, Qingshen
;
Bai, Peng
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Bai, Peng
;
Yang, Ya
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Yang, Ya
;
Hou, Te-Chien
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Hou, Te-Chien
;
Wang, Zhong Lin
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机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Chen, Jun
;
Zhu, Guang
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Zhu, Guang
;
Yang, Weiqing
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Yang, Weiqing
;
Jing, Qingshen
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Jing, Qingshen
;
Bai, Peng
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Bai, Peng
;
Yang, Ya
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Yang, Ya
;
Hou, Te-Chien
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Hou, Te-Chien
;
Wang, Zhong Lin
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R ChinaGeorgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA