Increasing the Selectivity of Pt-Gate SiC Field Effect Gas Sensors by Dynamic Temperature Modulation

被引：19

作者：

Bur, Christian ^{[1
,2
]}

Reimann, Peter ^{[3
]}

Andersson, Mike ^{[4
]}

Schuetze, Andreas ^{[5
]}

Spetz, Anita Lloyd ^{[4
,6
]}

机构：

[1] Univ Saarland, D-66123 Saarbrucken, Germany

[2] Linkoping Univ, S-58183 Linkoping, Sweden

[3] Dillinger Hutte GTS, D-66763 Dillingen, Germany

[4] Linkoping Univ, Div Appl Phys, S-58183 Linkoping, Sweden

[5] Univ Saarland, Lab Measurement Technol, D-66123 Saarbrucken, Germany

[6] Oulu Univ, Microelect & Mat Phys Labs, Oulu 90570, Finland

来源：

IEEE SENSORS JOURNAL | 2012年 / 12卷 / 06期

基金：

瑞典研究理事会;

关键词：

Metal insulator silicon carbide field effect transistors (MISiC FET); NOx; selectivity; temperature modulation; virtual multisensor; OPERATION;

D O I：

10.1109/JSEN.2011.2179645

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on a diode coupled silicon carbide field effect transistor (FET) with platinum as catalytic gate material, the influence of dynamic temperature modulation on the selectivity of gas analysis sensors FETs has been investigated. This operating mode, studied intensively for semiconductor gas sensors, has only recently been applied to FETs. A suitable temperature cycle for detection of typical exhaust gases (CO, NO, C3H6, H-2, NH3) was developed and combined with appropriate signal processing. The sensor data were evaluated using multivariate statistics, e.g., linear discriminant analysis. Measurements have proven that typical exhaust gases can be discriminated in backgrounds with 0, 10, and 20% oxygen. Furthermore, we are able to quantify the mentioned gases and to determine unknown concentrations based on training data. Very low levels of relative humidity below a few percent influence the sensor response considerably but for higher levels the cross interference of humidity is negligible. In addition, experiments regarding stability and reproducibility were performed.

引用

页码：1906 / 1913

页数：8

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