Observation of subband resonances between high-energy states in a series of asymmetric double-quantum-well superlattice systems

被引:4
作者
Hosoda, M [1 ]
Sato, M
Hirose, Y
Shioji, T
Nohgi, J
Domoto, C
Ohtani, N
机构
[1] Osaka City Univ, Dept Appl Phys, Sumiyoshi Ku, Osaka 5588585, Japan
[2] ATR, Adapt Commun Res Labs, Kyoto 6190288, Japan
[3] Doshisha Univ, Dept Elect, Kyoto 6100321, Japan
来源
PHYSICAL REVIEW B | 2006年 / 73卷 / 16期
关键词
D O I
10.1103/PhysRevB.73.165329
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report subband resonances related to higher energy subbands in a series of GaAs/AlAs asymmetric double quantum well superlattice (ADQW-SL) systems under electric field. Various phenomena can be observed in these ADQW-SL systems, such as the Gamma-X-Gamma electron resonance and transport, hole subband resonance, phonon replica, and Gamma-Gamma anticrossings. These resonances greatly affect photoluminescence properties, photocurrent-voltage characteristics, and photocurrent impulse responses. We also investigated the X-Gamma transfer mechanism in these systems.
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页数:7
相关论文
共 11 条
[1]   Wannier-Stark localization in asymmetric double-well superlattices [J].
AgulloRueda, F ;
Grahn, HT ;
Ploog, K .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :8106-8108
[2]   Intersubband electroluminescence using X-Γ carrier injection in a GaAs/AlAs superlattice [J].
Domoto, C ;
Ohtani, N ;
Kuroyanagi, K ;
Vaccaro, PO ;
Takeuchi, H ;
Nakayama, M ;
Nishimura, T .
APPLIED PHYSICS LETTERS, 2000, 77 (06) :848-850
[3]   GAMMA-X-GAMMA ELECTRON-TRANSFER IN MIXED TYPE-I TYPE-II GAAS/ALAS QUANTUM-WELL STRUCTURES [J].
FELDMANN, J ;
PREIS, M ;
GOBEL, EO ;
DAWSON, P ;
FOXON, CT ;
GALBRAITH, I .
SOLID STATE COMMUNICATIONS, 1992, 83 (03) :245-248
[4]  
Henneberger F., 1993, OPTICS SEMICONDUCTOR
[5]   Efficient short-wavelength light emission from asymmetric double quantum wells by using electron and hole collection into the same narrow quantum well [J].
Hirose, Y ;
Hosoda, M ;
Domoto, C ;
Nishimura, T ;
Aida, T .
APPLIED PHYSICS LETTERS, 2002, 81 (20) :3870-3872
[6]   Influence of Gamma-X resonances on Gamma(1) ground state electron occupation in type-I GaAs/AlAs superlattice [J].
Hosoda, M ;
Tominaga, K ;
Ohtani, N ;
Mimura, H ;
Nakayama, M .
APPLIED PHYSICS LETTERS, 1997, 70 (12) :1581-1583
[7]   EVIDENCE FOR GAMMA-CHI TRANSPORT IN TYPE-I GAAS/ALAS SEMICONDUCTOR SUPERLATTICES [J].
HOSODA, M ;
OHTANI, N ;
MIMURA, H ;
TOMINAGA, K ;
DAVIS, P ;
WATANABE, T ;
TANAKA, G ;
FUJIWARA, K .
PHYSICAL REVIEW LETTERS, 1995, 75 (24) :4500-4503
[8]   Carrier transport affected by Γ-X transfer in type-I GaAs/AlAs superlattices [J].
Hosoda, M ;
Ohtani, N ;
Mimura, H ;
Tominaga, K ;
Watanabe, T ;
Inomata, H ;
Fujiwara, K .
PHYSICAL REVIEW B, 1998, 58 (11) :7166-7180
[9]   Observation of Gamma-X resonances in type-I GaAs/AlAs semiconductor superlattices: Anomaly in photoluminescence [J].
Hosoda, M ;
Mimura, H ;
Ohtani, N ;
Tominaga, K ;
Fujita, K ;
Watanabe, T ;
Inomata, H ;
Nakayama, M .
PHYSICAL REVIEW B, 1997, 55 (20) :13689-13696
[10]   Electric-field-induced anti-Stokes photoluminescence in an asymmetric GaAs/(Al,Ga)As double quantum well superlattice [J].
Schrottke, L ;
Hey, R ;
Grahn, HT .
PHYSICAL REVIEW B, 1999, 60 (24) :16635-16639