Study on the effects of well number on temperature characteristics in 1.3-μm InGaAsP-InP quantum-well lasers

被引：2
|
作者：
Jin, JY [1 ]
Tian, DC
Shi, J
Li, TN
机构：
[1] Wuhan Univ, Dept Phys, Hubei 430072, Peoples R China
[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China
[3] Inphenix Inc, Livermore, CA 94551 USA
来源：
INFRARED PHYSICS & TECHNOLOGY | 2004年 / 45卷 / 03期
基金：
中国国家自然科学基金;
关键词：
MOVPE; InGaAsP/InGaAsP SL-MQW; well number; characteristic temperature; semiconductor lasers;
D O I：
10.1016/j.infrared.2003.10.001
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Effects of well number on temperature characteristics in 1.3-mum InGaAsP-InP multi-quantum-well lasers have been investigated. A smaller well number is suitable for lower threshold current and higher differential quantum efficiency at 25 degreesC, while larger well number produces better performances at 85 degreesC. Furthermore, lasers with a larger well number can achieve a less output power penalty at high temperature. For the first time, a theoretical model has been established to precisely explain the relationship between the characteristic temperature of threshold current and that of external differential efficiency. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：209 / 215
页数：7
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