Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage

被引：131

作者：

Bailey, Christopher G. ^{[1
]}

Forbes, David V. ^{[1
]}

Polly, Stephen J. ^{[1
]}

Bittner, Zachary S. ^{[1
]}

Dai, Yushuai ^{[1
]}

Mackos, Chelsea ^{[1
]}

Raffaelle, Ryne P. ^{[1
]}

Hubbard, Seth M. ^{[1
]}

机构：

[1] Rochester Inst Technol, Rochester, NY 14623 USA

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2012年 / 2卷 / 03期

基金：

美国国家科学基金会;

关键词：

InAs coverage; InAs/GaAs; nanostructured solar cells; quantum dots (QDs); strain balance; strain compensation; superlattice; RELAXATION DYNAMICS; EFFICIENCY;

D O I：

10.1109/JPHOTOV.2012.2189047

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Ten-, 20-, and 40-layer InAs/GaAs quantum-dot (QD)-embedded superlattice solar cells were compared with a baseline GaAs p-i-n solar cell. Proper strain balancing and a reduction of InAs coverage value in the superlattice region of the QD embedded devices enabled the systematic increase in short-circuit current density with QD layers (0.02-mA/cm(2)/QD layer) with minimal open-circuit voltage loss (similar to 50 mV). The improvement in voltage was found to be due to a reduced nonradiative recombination resulting from a reduced density of larger defective QDs and effective strain management. The 40-layer device exceeded the baseline GaAs cell by 0.5% absolute efficiency improving efficiency relative to the baseline by 3.6%.

引用

页码：269 / 275

页数：7

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