A unified analytical continuous current model applicable to accumulation mode (junctionless) and inversion mode MOSFETs with symmetric and asymmetric double-gate structures
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作者:
Jin, Xiaoshi
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Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R ChinaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Jin, Xiaoshi
[1
]
Liu, Xi
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Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R ChinaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Liu, Xi
[1
]
Wu, Meile
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Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R ChinaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Wu, Meile
[1
]
Chuai, Rongyan
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Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R ChinaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Chuai, Rongyan
[1
]
Lee, Jung-Hee
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Kyungpook Natl Univ, Sch EECS, Taegu 702701, South KoreaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Lee, Jung-Hee
[2
]
Lee, Jong-Ho
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Seoul Natl Univ, Sch EECS Engn, Seoul 151742, South Korea
Seoul Natl Univ, ISRC, Seoul 151742, South KoreaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Lee, Jong-Ho
[3
,4
]
机构:
[1] Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
[2] Kyungpook Natl Univ, Sch EECS, Taegu 702701, South Korea
[3] Seoul Natl Univ, Sch EECS Engn, Seoul 151742, South Korea
[4] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
A unified analytical continuous model, based on an approximate solution of Poisson's equation, is proposed for the current-voltage (I-V) characteristics of accumulation mode (junctionless FETs) and conventional inversion mode MOSFETs which have symmetric and asymmetric double-gate structures. As a unified model, it is applicable to both junctionless and conventional double-gate (DG) MOSFETs and also represents the I-V characteristics of the MOSFETs with symmetric and asymmetric cases. The model with symmetric and asymmetric gates accounts for body doping, body thickness, and front-gate and back-gate oxide thicknesses. The model is verified by comparing with TCAD simulation results and shows a good agreement. (C) 2012 Elsevier Ltd. All rights reserved.
机构:
Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R ChinaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Jin, Xiaoshi
Liu, Xi
论文数: 0引用数: 0
h-index: 0
机构:
Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R ChinaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Liu, Xi
Lee, Jung-Hee
论文数: 0引用数: 0
h-index: 0
机构:
Kyungpook Natl Univ, Sch EECS, Taegu 702701, South KoreaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Lee, Jung-Hee
Lee, Jong-Ho
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Sch EECS Eng, Seoul 151742, South Korea
Seoul Natl Univ, ISRC Interuniv Semicond Res Ctr, Seoul 151742, South KoreaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
机构:
Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R ChinaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Jin, Xiaoshi
Liu, Xi
论文数: 0引用数: 0
h-index: 0
机构:
Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R ChinaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Liu, Xi
Lee, Jung-Hee
论文数: 0引用数: 0
h-index: 0
机构:
Kyungpook Natl Univ, Sch EECS, Taegu 702701, South KoreaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China
Lee, Jung-Hee
Lee, Jong-Ho
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Sch EECS Eng, Seoul 151742, South Korea
Seoul Natl Univ, ISRC Interuniv Semicond Res Ctr, Seoul 151742, South KoreaShenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China