High-Mobility Solution-Processed Amorphous Indium Zinc Oxide/In2O3 Nanocrystal Hybrid Thin-Film Transistor

被引：24

作者：

Wang, ChunLan ^{[1
,2
]}

Liu, XingQiang ^{[1
,2
]}

Xiao, XiangHeng ^{[1
,2
]}

Liu, YueLi ^{[3
,4
]}

Chen, Wen ^{[3
,4
]}

Li, JinChai ^{[1
,2
]}

Shen, GuoZhen ^{[5
]}

Liao, Lei ^{[1
,2
]}

机构：

[1] Wuhan Univ, Minist Educ, Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Peoples R China

[2] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China

[3] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

[4] Wuhan Univ Technol, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China

[5] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Indium zinc oxide (IZO); low temperature; solution processing; thin-film transistors (TFTs);

D O I：

10.1109/LED.2012.2226425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In2O3 NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm(2) . V-1 . s(-1) and an on-off ratio of 107, which were obtained at 1 mol% In2O3 NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.

引用

页码：72 / 74

页数：3

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