Dislocation-related photoluminescence imaging of mc-Si wafers at room temperature

被引：8
|
作者：
Mankovics, D. [1 ]
Schmid, R. P. [1 ,2 ]
Arguirov, T. [1 ,2 ]
Kittler, M. [1 ,2 ]
机构：
[1] Brandenburg Tech Univ Cottbus, Joint Lab IHP BTU, D-03046 Cottbus, Germany
[2] IHP Microelect, D-15236 Frankfurt, Oder, Germany
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2012年 / 47卷 / 11期
关键词：
dislocations; imaging; photoluminescence; silicon; MULTICRYSTALLINE SILICON; SOLAR-CELLS; DEFECTS; SPECTROSCOPY;
D O I：
10.1002/crat.201200146
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report on a method for fast detection of defect rich areas in multicrystalline silicon solar wafers. It is based on photoluminescence imaging of the whole wafers and detects both the band-to-band radiation as well as the dislocation specific radiation D1. To illustrate the capabilities of the method we examined 5.0 x 5.0 cm(2) wafer pieces in different stages of their processing. The achieved resolution of the D1 images was similar to 120 mu m, within a total recording time of 550 ms. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1148 / 1152
页数：5
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