Enhanced Thermoelectric Properties of n-type Mg3Sb2 by Excess Magnesium and Tellurium Doping

被引：27

作者：

Wang, Yangzhong ^{[1
]}

Zhang, Xin ^{[1
]}

Wang, Yang ^{[1
]}

Liu, Hongliang ^{[1
]}

Zhang, Jiuxing ^{[1
,2
]}

机构：

[1] Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China

[2] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 06期

基金：

中国国家自然科学基金;

关键词：

carrier concentration; n-type Mg3Sb2; thermal conductivity; thermoelectric; ZINTL COMPOUNDS; PERFORMANCE; COMPOUND; SCATTERING; CHEMISTRY;

D O I：

10.1002/pssa.201800811

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mg3Sb2 shows poor comprehensive thermoelectric properties mainly because its conductivity is very poor, despite it has very low thermal conductivity. Excess Mg combined with small amount of Te doping can control carrier type and carrier concentration. The semiconductor and metallic transport mechanism coordinate to control the electrical transport characteristics and improve the electrical transport performance. The lattice thermal conductivity of Mg3Sb2 decreases after Te doping. The maximum ZT value is 0.78 for Mg3.2Sb1.99Te0.01 at 773 K.

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页数：6

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