Direct Room Temperature Welding and Chemical Protection of Silver Nanowire Thin Films for High Performance Transparent Conductors

被引:180
作者
Ge, Yongjie [1 ]
Duan, Xidong [1 ]
Zhang, Meng [1 ]
Mei, Lin [1 ]
Hu, Jiawen [1 ]
Hu, Wei [2 ]
Duan, Xiangfeng [1 ,3 ]
机构
[1] Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Hunan, Peoples R China
[2] Hunan Univ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China
[3] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA
基金
中国国家自然科学基金;
关键词
SELF-ASSEMBLED MONOLAYERS; SODIUM-BOROHYDRIDE; INFRARED-SPECTROSCOPY; POLYOL SYNTHESIS; GRAPHENE; NANOPARTICLES; TRANSISTORS; GROWTH; GOLD; AG;
D O I
10.1021/jacs.7b07851
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Silver nanowire (Ag-NW) thin films have emerged as a promising next-generation transparent electrode. However, the current Ag-NW thin films are often plagued by high NW-NW contact resistance and poor long-term stability, which can be largely attributed to the ill-defined polyvinylpyrrolidone (PVP) surface ligands and nonideal Ag-PVP-Ag contact at NW-NW junctions. Herein, we report a room temperature direct welding and chemical protection strategy to greatly improve the conductivity and stability of the Ag-NW thin films. Specifically, we use a sodium borohydride (NaBH4) treatment process to thoroughly remove the PVP ligands and produce a clean Ag-Ag interface that allows direct welding of NW-NW junctions at room temperature, thus greatly improving the conductivity of the Ag-NW films, outperforming those obtained by thermal or plasmonic thermal treatment. We further show that, by decorating the as-formed Ag-NW thin film with a dense, hydrophobic dodecanethiol layer, the stability of the Ag-NW film can be greatly improved by 150-times compared with that of PVP-wrapped ones. Our studies demonstrate that a proper surface ligand design can effectively improve the conductivity and stability of Ag-NW thin films, marking an important step toward their applications in electronic and optoelectronic devices.
引用
收藏
页码:193 / 199
页数:7
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