Modified Airy function method modelling of tunnelling current for Schottky barrier diodes on silicon carbide

被引：13
作者：
Latreche, A. [1 ]
Ouennoughi, Z. [2 ]
机构：
[1] Univ Bordj Bou Arreridj, Dept Mat Sci, Bordj Bou Arreridj, Algeria
[2] UFAS Setif, Dept Phys, Lab Optoelect & Composants, Setif, Algeria
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 10期
关键词：
TRANSFER-MATRIX METHOD; LEAKAGE;
D O I：
10.1088/0268-1242/28/10/105003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a simple method for analysing the tunnelling current through Schottky barrier diodes on SiC, based on the modified Airy function (MAF) approach. The MAF method is accurate for linear-shaped barriers which is the case for the top of the Schottky barrier diodes. The results have been compared with those obtained by the conventional Wentzel-Kramers-Brillouin (WKB). This study proves that the WKB method is valid for the Schottky barrier diodes with and without the incorporation of Schottky barrier lowering under low or high bias voltage.
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页数：8
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