A study of the electrical properties of the porous GaP (111) surface

被引：1
|
作者：
Masalov, S. A. [1 ]
Atrashchenko, A. V. [1 ]
Ulin, V. P. [1 ]
Popov, E. O. [1 ]
Kolos'ko, A. G. [1 ]
Filippov, S. V. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063785016110183
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Local electrical properties of the surface of porous GaP have been measured by the method of tunneling spectroscopy in ultrahigh vacuum. Two surface areas with different electrical properties were found. The effect of anomalous field-induced photoemission was observed. The most probable reason for this effect is the presence of Ga2O3 and GaP nanoclusters and the high density of acceptor-type surface states associated with these clusters. Integral characteristics of the field electron emission from the sample surface were obtained by using a computerized recording system with online processing of current-voltage characteristics.
引用
收藏
页码：1118 / 1121
页数：4
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