Directed Self-Assembly Lithography and Its Application Based on Simulation Approach

被引：4
|
作者：
Kim, Sang-Kon [1 ]
机构：
[1] Hanyang Univ, Dept Appl Phys, Seoul 426791, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 04期
关键词：
Lithography; Lithography Simulation; Self-Assembly; Diblock Copolymer; Diblock Copolymer Lithography; COPOLYMERS; MODEL;
D O I：
10.1166/jnn.2012.5607
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The directed self-assembly (DSA) technology of block copolymers is a candidate for next-generation lithography. The computation model of this lithography can assist in overcoming its challenges. In this paper, a template-assisted self-assembly (DSA graphoepitaxy) is modeled and simulated in a molecular scale to reduce the process complexity. For a full simulation, the template fabrication and DSA process are modeled and simulated to evaluate the impact of the process parameters on the pattern profile. Simulation results similar to the experimental results allow the prediction of the self-assembled patterns of the confined block polymers.
引用
收藏
页码：3412 / 3416
页数：5
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