30nm Enhancement-mode In0.53Ga0.47As MOSFETs on Si Substrates Grown by MOCVD Exhibiting High Transconductance and Low On-resistance

被引：0
作者：
Zhou, Xiuju [1 ]
Li, Qiang [1 ]
Tang, Chak Wah [1 ]
Lau, Kei May [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
来源：
2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2012年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the development of 30nm enhancement-mode In0.53Ga0.47As MOSFETs grown on Si substrates featuring Al2O3/InAlAs composite gate stack with extrinsic transconductance of 1700mS/mm at V-ds=0.5V and on-resistance of 157 Omega.mu m. A low-temperature process of post metallization annealing has been developed to achieve enhancement-mode operation. Capacitance-Voltage measurements and TEM observation were carried out to investigate the mechanisms of threshold voltage shift. Furthermore, device scalability down to 30nm is reported.
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