Site-Selective Epitaxy of Graphene on Si Wafers

被引：9

作者：

Fukidome, Hirokazu ^{[1
]}

Kawai, Yusuke ^{[2
]}

Handa, Hiroyuki ^{[1
]}

Hibino, Hiroki ^{[3
]}

Miyashita, Hidetoshi ^{[2
]}

Kotsugi, Masato ^{[4
]}

Ohkochi, Takuo ^{[4
]}

Jung, Myung-Ho ^{[1
]}

Suemitsu, Tetsuya ^{[1
]}

Kinoshita, Toyohiko ^{[4
]}

Otsuji, Taiichi ^{[1
]}

Suemitsu, Maki ^{[1
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun RIEC, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Sch Engn, Sendai, Miyagi 9808579, Japan

[3] NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[4] Japan Synchrotron Radiat Res Inst JASRI SPring 8, Hyogo 6795148, Japan

来源：

PROCEEDINGS OF THE IEEE | 2013年 / 101卷 / 07期

基金：

日本科学技术振兴机构;

关键词：

Epitaxy; graphene; Si; substrate microfabrication; FILMS; PERFORMANCE; TRANSISTORS; GRAPHITE; FETS;

D O I：

10.1109/JPROC.2013.2259131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fusion of graphene with silicon may provide an effective solution to the problem of scale in electronic devices. This approach will allow the excellent electronic properties of graphene to be combined with known Si device technologies. We review the epitaxial growth of graphene on Si substrates (GOS) for fabricating transistors. GOS has been multifunctionalized by controlling the orientation of the Si substrate. The site-selective epitaxy of GOS has also been developed by controlling the base SiC thin films. These results demonstrate that GOS is suitable for integrated devices.

引用

页码：1557 / 1566

页数：10

共 65 条

[1] Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process [J].