Field emission scanning probe lithography with GaN nanowires on active cantilevers

被引：7

作者：

Behzadirad, Mahmoud ^{[1
]}

Rishinaramangalam, Ashwin K. ^{[1
]}

Feezell, Daniel ^{[1
]}

Busani, Tito ^{[1
]}

Reuter, Christoph ^{[2
]}

Reum, Alexander ^{[2
]}

Holz, Mathias ^{[2
]}

Gotszalk, Teodor ^{[3
]}

Mechold, Stephan ^{[4
]}

Hofmann, Martin ^{[4
]}

Ahmad, Ahmad ^{[4
]}

Ivanov, Tzvetan ^{[4
]}

Rangelow, Ivo W. ^{[4
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] Nano Analyt GmbH, Ehrenbergstr 1, D-98693 Ilmenau, Germany

[3] Wroclaw Univ Sci & Technol, Dept Nanometrol, Ul Janiszewskiego 11-17 St, PL-50372 Wroclaw, Poland

[4] Tech Univ Ilmenau, Dept Micro & Nanoelect Syst, Gustav Kirchhoff Str 1, D-98693 Ilmenau, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2020年 / 38卷 / 03期

关键词：

ATOMIC-FORCE MICROSCOPY;

D O I：

10.1116/1.5137901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Field emission scanning probe lithography (FE-SPL) is based on the exposure of a resist covered substrate with low energy electrons emitted from an ultra-sharp tip placed in close vicinity to a sample. GaN nanowires (NWs) present high mechanical stability, suitable geometry for FE-SPL, and controllable electrical properties achieved by adjusting dopant concentration. Here, the authors will present long time exposure results performed using GaN NWs tips, mounted on active scanning probes, working as field electron emitters. Using GaN NW tips, features down to the sub-10nm were achieved in the FE-SPL process. A systematic study of the field emission current stability, exposure reproducibility, and results on exemplary high-resolution exposure and nanostructure imaging done with the same GaN tips will also be presented.

引用

页数：6

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