Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale NAND Flash Memories

被引：63

作者：

Compagnoni, Christian Monzio ^{[1
,2
]}

Gusmeroli, Riccardo ^{[1
,2
]}

Spinelli, Alessandro S. ^{[1
,2
,3
]}

Visconti, Angelo ^{[4
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Italian Univ, Nanoelect Team, I-40125 Bologna, Italy

[3] CNR, Ist Foton & Nanotecnol, I-20133 Milan, Italy

[4] Dept Cent Res & Dev, Nonvolatile Memory Proc Dev Grp, I-20041 Agrate Brianza, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 11期

关键词：

Electron-injection statistics; Flash memories; Fowler-Nordheim tunneling; semiconductor device modeling;

D O I：

10.1109/TED.2008.2003332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a detailed analytical modeling for the constant-current Fowler-Nordheim program operation of NAND Flash memories, able to describe both the average transient of the cell threshold voltage and its statistical spread due to the granular nature of the electron current flowing through the cell tunnel oxide. We analytically investigate the electron-injection process, highlighting that the steepness of the tunneling current versus floating-gate voltage characteristics and the control-gate to floating-gate capacitance give the field feedback factor, determining the average number of injected electrons at which the injection process becomes sub-Poissonian. Finally, we show that cell scaling will reduce the achievable accuracy of the program algorithm, due to the reduction in the number of electrons controlling cell state.

引用

页码：3192 / 3199

页数：8

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