Morphology control of tunneling dielectric towards high-performance organic field-effect transistor nonvolatile memory

被引：49
作者：
She, Xiao-Jian [1 ]
Liu, Chang-Hai [1 ]
Sun, Qi-Jun [1 ]
Gao, Xu [1 ]
Wang, Sui-Dong [1 ]
机构：
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
来源：
ORGANIC ELECTRONICS | 2012年 / 13卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Organic field-effect transistors; Nonvolatile memory; Floating gate; Au nanoparticles; Polystyrene; Pentacene; THIN-FILM; POLYMER; HYSTERESIS; STORAGE; VOLTAGE; DEVICES; GOLD;
D O I：
10.1016/j.orgel.2012.05.051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report high-performance organic field-effect transistor nonvolatile memory based on nano-floating-gate, which shows a large memory window of about 70 V, high ON/OFF ratio of reading current over 105 after 1 week storage, high field-effect mobility of 0.6 cm(2)/V s, and good programming/erasing/reading endurance. The devices incorporate Au nanoparticles and polystyrene layer on top to form the nano-floating-gate, and we demonstrate that the morphology control of the tunneling dielectric is critically significant to improve the memory performance. The optimized tunneling dielectric morphology is favorable to the efficient charge tunneling, reliable charge storage and high-quality organic film growth. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：1908 / 1915
页数：8
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