Study of photoluminescence characteristics of CdSe quantum dots hybridized with Cu nanowires

被引:38
作者
Chi, Xiaochun [1 ]
Wang, Yinghui [1 ]
Gao, Jiechao [1 ]
Liu, Qinghui [1 ]
Sui, Ning [1 ]
Zhu, Jinyang [1 ]
Li, XueCong [2 ]
Yang, Haigui [3 ]
Zou, Lu [1 ]
Kou, Jun [4 ]
Zhang, Hanzhuang [1 ]
机构
[1] Jilin Univ, Coll Phys, Minist Educ, Key Lab Phys & Technol Adv Batteries, Changchun 130012, Peoples R China
[2] Tianjin Polytech Univ, Dept Phys, Tianjin 300387, Peoples R China
[3] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Opt Syst Adv Mfg Technol, Changchun 130033, Peoples R China
[4] Beijing Inst Aerosp Control Devices, Beijing 100000, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
photoluminescence; quantum dots; Cu nanowires; plasmon effect; SURFACE-PLASMON RESONANCE;
D O I
10.1002/bio.3101
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The photoluminescence (PL) characteristics of semiconductor CdSe quantumdots (QDs) aggregated on Cu nanowires (NWs) were studied in detail. The PL relaxation dynamic data show that Cu NWs improve the PL intensity of CdSe QDs by accelerating the emission relaxation rate. The temperature-dependent PL data and excitation intensity-dependent PL data suggest that the activation energy of CdSe QDs might decrease due to the excellent heat transfer properties and the plasmon effect of Cu NWs. Copyright (C) 2016 John Wiley & Sons, Ltd.
引用
收藏
页码:1298 / 1301
页数:4
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