Performance dependence of InGaP/InGaAs/GaAs pHEMT's on gate metallization

被引：5

作者：

Fay, P ^{[1
]}

Stevens, K

Elliot, J

Pan, N

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] Kopin Corp, Taunton, MA 02780 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 11期

关键词：

GaInP; InGaP; MODFET's; pHEMT's; Schottky contacts;

D O I：

10.1109/55.798041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of InGaP-based pHEMT's as a function of gate metallization is examined for Mo/Au, Ti/Au, and Pt/Au gates. DC and microwave performance of pHEMT's with 0.7-mu m gate lengths is evaluated. Transconductance, threshold voltage, f(t), and f(max) are found to depend strongly on gate metallization, High-speed performance is achieved, with f(t) of 41.3 GHz and f(max) of 101 GHz using Mo/Au gates. The difference in performance between devices with different gate metallizations is postulated to be due to a combination of the difference in Schottky barrier heights and different gate-to-channel spacings due to penetration of the gate metal into the InGaP barrier layer.

引用

页码：554 / 556

页数：3

共 9 条

[1] A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT [J].

DAMBRINE, G ;

CAPPY, A ;

HELIODORE, F ;

PLAYEZ, E .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) :1151-1159

[2] NOISE IN CHANNEL DOPED GAINP/INGAAS HFET DEVICES [J].

GEIGER, D ;

MITTERMEIER, E ;

DICKMANN, J ;

GENG, C ;

SCHOLZ, F ;

KOHN, E .

ELECTRONICS LETTERS, 1995, 31 (15) :1295-1297

[3]

Harada N, 1998, IEICE T ELECTRON, VE81C, P876

[4] Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals [J].

Lee, CT ;

Shiao, HP ;

Yeh, NT ;

Tsai, CD ;

Lyu, YT ;

Tu, YK .

SOLID-STATE ELECTRONICS, 1997, 41 (01) :1-5

[5] Pt/Ti/Pt/Au Schottky contacts on InGaP/GaAs HEMTs [J].

Lothian, JR ;

Ren, F ;

Kuo, JM ;

Weiner, JS ;

Chen, YK .

SOLID-STATE ELECTRONICS, 1997, 41 (05) :673-675

[6] Enhancement-mode high electron mobility transistors (E-HEMT's) lattice-matched to InP [J].

Mahajan, A ;

Arafa, M ;

Fay, P ;

Caneau, C ;

Adesida, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (12) :2422-2429

[7]

MING YK, 1998, IEEE T MICROW THEORY, V3, P1671

[8] 0.065 mu m gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers [J].

Nihei, M ;

Hara, N ;

Suehiro, H ;

Kuroda, S .

SOLID-STATE ELECTRONICS, 1997, 41 (10) :1647-1650

[9] High performance pseudomorphic InGaP/InGaAs power HEMTs [J].

Ren, F ;

Lothian, JR ;

Tsai, HS ;

Kuo, JM ;

Lin, J ;

Weiner, JS ;

Ryan, RW ;

Tate, A ;

Chen, YK .

SOLID-STATE ELECTRONICS, 1997, 41 (12) :1913-1915

← 1 →