Epitaxial Chemical Vapor Deposition of Silicon on an Oxygen Monolayer on Si(100) Substrates

被引：12

作者：

Delabie, Annelies ^{[1
,2
]}

Jayachandran, Suseendran ^{[1
,3
]}

Caymax, Matty ^{[1
]}

Loo, Roger ^{[1
]}

Maggen, Jens ^{[1
,2
]}

Pourtois, Geoffrey ^{[1
,4
]}

Douhard, Bastien ^{[1
]}

Conard, Thierry ^{[1
]}

Meersschaut, Johan ^{[1
]}

Lenka, Haraprasanna ^{[1
,5
]}

Vandervorst, Wilfried ^{[1
,5
]}

Heyns, Marc ^{[1
,3
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Met & Mat, B-3001 Louvain, Belgium

[4] Univ Antwerp, Dept Chem, PLASMANT Res Grp, B-2610 Antwerp, Belgium

[5] Katholieke Univ Leuven, Dept Phys, B-3001 Louvain, Belgium

来源：

ECS SOLID STATE LETTERS | 2013年 / 2卷 / 11期

关键词：

TEMPERATURE SI; GROWTH; GE;

D O I：

10.1149/2.009311ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O-3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O-3 reaction at 50 degrees C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm(2) is achieved from SiH4 at 500 degrees C. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：P104 / P106

页数：3

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