MBE growth and thermoelectric properties of Bi2Te3 thin films

被引：0

作者：

Cho, SL ^{[1
]}

Kim, YK ^{[1
]}

DiVenere, A ^{[1
]}

Wong, GKL ^{[1
]}

Meyer, JR ^{[1
]}

Ketterson, JB ^{[1
]}

机构：

[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

来源：

THERMOELECTRIC MATERIALS 1998 - THE NEXT GENERATION MATERIALS FOR SMALL-SCALE REFRIGERATION AND POWER GENERATION APPLICATIONS | 1999年 / 545卷

关键词：

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

We have grown high quality Bi2Te3 thin films on CdTe(111)B substrates using MBE. Structural properties have been investigated using in-situ reflection high-energy electron diffraction (RHEED) and theta-2 theta X-ray diffraction analysis. They show that Bi2Te3 films on CdTe(111) grow along the (00.l) in the hexagonal cell with a layer-by-layer growth mode, resulting in a smooth surface, and an X-ray Bragg peak FWHM of 0.2 degrees. The thermopower and electrical conductivity of the stoichiometric Bi2Te3 films were similar to 200 mu V/K and 10(3) (Omega cm)(-1), respectively, comparable to the single crystal bulk values. We have observed the antisite defect effect in Te-rich Bi2Te3 films: excess Te occupies Bi lattice sites and behaves as an n-type dopant. Crystallinity and transport properties are strongly affected by non-stoichiometry.

引用

页码：183 / 188

页数：6

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