Strain-Induced Spatial and Spectral Isolation of Quantum Emitters in Mono- and Bilayer WSe2

被引：278

作者：

Kumar, S. ^{[1
]}

Kaczmarczyk, A. ^{[1
]}

Gerardot, B. D. ^{[1
]}

机构：

[1] Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

NANO LETTERS | 2015年 / 15卷 / 11期

基金：

英国工程与自然科学研究理事会; 欧洲研究理事会;

关键词：

single quantum emitter; transition metal dichalcogenide semiconductor; mono- and bilayer WSe2; patterned substrate; strain; SINGLE PHOTONS; MONOLAYER; TRANSITION; SPINS; DOTS;

D O I：

10.1021/acs.nanolett.5b03312

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique optoelectronic properties. Here, we report that strain gradients, either unintentionally induced or generated by substrate patterning, result in spatially and spectrally isolated quantum emitters in mono- and bilayer WSe2. By correlating localized excitons with localized strain variations, we show that the quantum emitter emission energy can be red-tuned up to a remarkable similar to 170 meV. We probe the fine-structure, magneto-optics, and second-order coherence of a strained emitter.These results raise the prospect of strain-engineering quantum emitter properties and deterministically creating arrays of quantum emitters in two-dimensional semiconductors.

引用

收藏

页码：7567 / 7573

页数：7

相关论文

共 32 条

[1] Hybrid semiconductor-atomic interface: slowing down single photons from a quantum dot [J].

Akopian, N. ;

Wang, L. ;

Rastelli, A. ;

Schmidt, O. G. ;

Zwiller, V. .

NATURE PHOTONICS, 2011, 5 (04) :230-233

[2] Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots -: art. no. 195315 [J].

Bayer, M ;

Ortner, G ;

Stern, O ;

Kuther, A ;

Gorbunov, AA ;

Forchel, A ;

Hawrylak, P ;

Fafard, S ;

Hinzer, K ;

Reinecke, TL ;

Walck, SN ;

Reithmaier, JP ;

Klopf, F ;

Schäfer, F .

PHYSICAL REVIEW B, 2002, 65 (19) :1953151-19531523

[3] Stretching and Breaking of Ultrathin MoS2 [J].

Bertolazzi, Simone ;

Brivio, Jacopo ;

Kis, Andras .

ACS NANO, 2011, 5 (12) :9703-9709

[4] Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping [J].

Castellanos-Gomez, Andres ;

Buscema, Michele ;

Molenaar, Rianda ;

Singh, Vibhor ;

Janssen, Laurens ;

van der Zant, Herre S. J. ;

Steele, Gary A. .

2D MATERIALS, 2014, 1 (01)

[5] Local Strain Engineering in Atomically Thin MoS2 [J].

Castellanos-Gomez, Andres ;

Roldan, Rafael ;

Cappelluti, Emmanuele ;

Buscema, Michele ;

Guinea, Francisco ;

van der Zant, Herre S. J. ;

Steele, Gary A. .

NANO LETTERS, 2013, 13 (11) :5361-5366

[6]

Chakraborty C., 2015, NAT NANOTECHNOL, V10, P507

[7] Bandgap Engineering of Strained Monolayer and Bilayer MoS2 [J].

Conley, Hiram J. ;

Wang, Bin ;

Ziegler, Jed I. ;

Haglund, Richard F., Jr. ;

Pantelides, Sokrates T. ;

Bolotin, Kirill I. .

NANO LETTERS, 2013, 13 (08) :3626-3630

[8] Strain-Induced Indirect to Direct Bandgap Transition in Multi layer WSe2 [J].

Desai, Sujay B. ;

Seol, Gyungseon ;

Kang, Jeong Seuk ;

Fang, Hui ;

Battaglia, Corsin ;

Kapadia, Rehan ;

Ager, Joel W. ;

Guo, Jing ;

Javey, Ali .

NANO LETTERS, 2014, 14 (08) :4592-4597

[9] Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress [J].

Ding, F. ;

Singh, R. ;

Plumhof, J. D. ;

Zander, T. ;

Krapek, V. ;

Chen, Y. H. ;

Benyoucef, M. ;

Zwiller, V. ;

Doerr, K. ;

Bester, G. ;

Rastelli, A. ;

Schmidt, O. G. .

PHYSICAL REVIEW LETTERS, 2010, 104 (06)

[10] Fine structure splitting in the optical spectra of single GaAs quantum dots [J].

Gammon, D ;

Snow, ES ;

Shanabrook, BV ;

Katzer, DS ;

Park, D .

PHYSICAL REVIEW LETTERS, 1996, 76 (16) :3005-3008

← 1 2 3 4 →