Ferroelectricity and phase transitions in In2Se3 van der Waals material

被引:45
|
作者
Soleimani, Maryam [1 ]
Pourfath, Mahdi [1 ,2 ]
机构
[1] Univ Tehran, Univ Coll Engn, Sch Elect & Comp Engn, Tehran 14395515, Iran
[2] TU Wien, Inst Microelect E360, A-1040 Vienna, Austria
基金
美国国家科学基金会;
关键词
PLANE-WAVE; ELECTRONIC-STRUCTURE; POLARIZATION; MOBILITY; ELECTRORESISTANCE; COHP; GAS;
D O I
10.1039/d0nr04096g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
van der Waals layered alpha-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field. This work addresses the missing theoretical framework through a comprehensive study on the layer-dependent electronic structure, ferroelectricity and the inter-layer interaction of alpha-In2Se3, by using first-principles density functional theory. Furthermore, surface states and their response to the built-in internal depolarizing field were carefully analyzed. Phase transition and Curie temperatures of 1L alpha-In2Se3 were studied by employing Monte Carlo and ab initio molecular dynamics simulations. The estimated Curie point is above room temperature, making 1L alpha-In2Se3 a promising candidate for future ultra-thin ferroelectric devices.
引用
收藏
页码:22688 / 22697
页数:10
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