Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates

被引:9
作者
Chai, J. [1 ]
Noriega, O. C. [2 ]
Dedigama, A. [1 ]
Kim, J. J. [3 ]
Savage, A. A. [1 ]
Doyle, K. [1 ]
Smith, C. [1 ]
Chau, N. [1 ]
Pena, J. [1 ]
Dinan, J. H. [1 ]
Smith, D. J. [3 ]
Myers, T. H. [1 ]
机构
[1] Texas State Univ San Marcos, Mat Sci Engn & Commercializat Program, San Marcos, TX 78666 USA
[2] Texas State Univ San Marcos, Dept Phys, San Marcos, TX 78666 USA
[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
关键词
ZnTe; GaSb; critical thickness; x-ray diffraction; transmission electron microscopy; confocal photoluminescence; X-RAY-DIFFRACTION; DISLOCATION MULTIPLICATION; MICROSCOPY; SEMICONDUCTORS; RELAXATION; DEFECTS;
D O I
10.1007/s11664-013-2650-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Cross-section electron micrographs, cathodoluminescence images, and confocal photoluminescence (cPL) images have been acquired for ZnTe layers deposited to various thicknesses on GaSb substrates with (211)B and (100) orientations. The critical thickness of ZnTe on GaSb is predicted to range between 115 nm and 329 nm, depending on the theoretical approach chosen. For ZnTe layers grown on (211)B GaSb with thickness exceeding 150 nm, dark spots and lines are present in all images. We associate these with dislocations generated at the ZnTe/GaSb interface. The discrepancy between this thickness value and a critical thickness value (350 nm to 375 nm) obtained for the (211)B orientation in a previous study is related to the distinction between the onset of misfit dislocations and the onset of significant plastic deformation. The former requires a direct imaging technique, as strain-related measurements such as x-ray diffraction do not have the resolution to detect the effects of small numbers of dislocations. For ZnTe layers on (100) GaSb, x-ray diffraction measurements indicate an abrupt change characteristic of dislocation multiplication at a thickness value in the range from 250 nm to 275 nm. High-resolution electron micrographs of the ZnTe/GaSb interface indicate that deoxidation using atomic hydrogen produces GaSb surfaces suitable for ZnTe epitaxy. cPL images of a 1.2-mu m-thick lattice-matched ZnTe0.99Se (0.01) layer grown on a 150-nm-thick ZnTe buffer layer on a (211)B GaSb substrate yield a threading dislocation density of similar to 7 x 10(4) cm(-2).
引用
收藏
页码:3090 / 3096
页数:7
相关论文
共 26 条
[1]   A NEW MICROSCOPE FOR SEMICONDUCTOR LUMINESCENCE STUDIES [J].
APLIN, PS ;
DAY, JCC .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (02) :329-331
[2]   NEW DEVELOPMENT IN CONFOCAL SCANNING OPTICAL MICROSCOPY AND ITS APPLICATION TO THE STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SEMICONDUCTORS [J].
APLIN, PS .
JOURNAL DE PHYSIQUE IV, 1991, 1 (C6) :163-171
[3]  
Arp M., 2011, BIOMED TECH S1, V56
[4]   3-DIMENSIONAL IMAGING OF NEURONS BY CONFOCAL FLUORESCENCE MICROSCOPY [J].
CARLSSON, K ;
WALLEN, P ;
BRODIN, L .
JOURNAL OF MICROSCOPY, 1989, 155 :15-26
[5]   Critical Thickness of ZnTe on GaSb(211)B [J].
Chai, J. ;
Noriega, O. C. ;
Dinan, J. H. ;
Myers, T. H. .
JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (11) :3001-3006
[6]   Growth of Lattice-Matched ZnTeSe Alloys on (100) and (211)B GaSb [J].
Chai, J. ;
Lee, K. -K. ;
Doyle, K. ;
Dinan, J. H. ;
Myers, T. H. .
JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (10) :2738-2744
[7]   CRITICAL THICKNESS IN HETEROEPITAXIAL GROWTH OF ZINCBLENDE SEMICONDUCTOR COMPOUNDS [J].
COHENSOLAL, G ;
BAILLY, F ;
BARBE, M .
JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) :68-74
[8]  
DODSON BW, 1989, ANNU REV MATER SCI, V19, P419
[9]   GEOMETRICAL-THEORY OF CRITICAL THICKNESS AND RELAXATION INSTRAINED-LAYER GROWTH [J].
DUNSTAN, DJ ;
YOUNG, S ;
DIXON, RH .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) :3038-3045
[10]  
Fewer DT, 1997, INST PHYS CONF SER, P569