Origin of a-plane (Al,Ga)N formation on patterned c-plane AlN/sapphire templates

被引：0
|
作者：
Mogilatenko, A. [1 ]
Kirmse, H.
Hagedorn, S. [1 ]
Richter, E. [1 ]
Zeimer, U. [1 ]
Weyers, M. [1 ]
Traenkle, G. [1 ]
机构：
[1] Ferdinand Braun Inst, Leibniz Inst Hochstfrequenztech, D-12489 Berlin, Germany
来源：
18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII) | 2013年 / 471卷
关键词：
D O I：
10.1088/1742-6596/471/1/012038
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
a-plane (Al,Ga)N layers can be grown on patterned c-plane AlN/sapphire templates with a ridge direction along [1 (1) over bar 00]Al2O3. Scanning nanobeam diffraction reveals that the formation of a-plane layers can be explained by nucleation of c-plane (Al,Ga)N with [11 (2) over bar0](Al,Ga)N parallel to [0001]Al2O3 at the ridge sidewalls. Faster growth of the top (11 (2) over bar0)(Al,Ga)N facet in the vertical direction leads to the overgrowth of c-plane (Al,Ga)N nucleated on the horizontal ridge and trench surfaces. Phase separation into binary GaN and AlN takes place during the first growth stages. However, this fades out and does not influence the composition of the final thick a-plane (Al,Ga)N layer.
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页数：4
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