Origin of a-plane (Al,Ga)N formation on patterned c-plane AlN/sapphire templates

被引：0

作者：

Mogilatenko, A. ^{[1
]}

Kirmse, H.

Hagedorn, S. ^{[1
]}

Richter, E. ^{[1
]}

Zeimer, U. ^{[1
]}

Weyers, M. ^{[1
]}

Traenkle, G. ^{[1
]}

机构：

[1] Ferdinand Braun Inst, Leibniz Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII) | 2013年 / 471卷

关键词：

D O I：

10.1088/1742-6596/471/1/012038

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

a-plane (Al,Ga)N layers can be grown on patterned c-plane AlN/sapphire templates with a ridge direction along [1 (1) over bar 00]Al2O3. Scanning nanobeam diffraction reveals that the formation of a-plane layers can be explained by nucleation of c-plane (Al,Ga)N with [11 (2) over bar0](Al,Ga)N parallel to [0001]Al2O3 at the ridge sidewalls. Faster growth of the top (11 (2) over bar0)(Al,Ga)N facet in the vertical direction leads to the overgrowth of c-plane (Al,Ga)N nucleated on the horizontal ridge and trench surfaces. Phase separation into binary GaN and AlN takes place during the first growth stages. However, this fades out and does not influence the composition of the final thick a-plane (Al,Ga)N layer.

引用

页数：4

共 50 条

[1] Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy
Mogilatenko, A., 1600, American Institute of Physics Inc. (113):
[2] Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy
Mogilatenko, A.
Hagedorn, S.
Richter, E.
Zeimer, U.
Goran, D.
Weyers, M.
Traenkle, G.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (09)
[3] HVPE growth of c-plane AlN on a-plane sapphire using nitridation layer
Takagi, Yuta
Miyagawa, Reina
Miyake, Hideto
Hiramatsu, Kazumasa
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 2011, 8 (02): : 470 - 472
[4] On the Origin of Transition to Nonpolar a-Plane GaN Growth on c-Plane Sapphire
Ivantsov, Vladimir
CRYSTAL GROWTH & DESIGN, 2023, 23 (05) : 3805 - 3812
[5] c-plane ZnO on a-plane sapphire: Inclusion of (1101) domains
Madel, M.
Neusser, G.
Simon, U.
Mizaikoff, B.
Thonke, K.
JOURNAL OF CRYSTAL GROWTH, 2015, 419 : 128 - 132
[6] THE EFFECT OF GAN AND ALN BUFFER LAYERS ON GAN FILM PROPERTIES GROWN ON BOTH C-PLANE AND A-PLANE SAPPHIRE
DOVERSPIKE, K
ROWLAND, LB
GASKILL, DK
FREITAS, JA
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) : 269 - 273
[7] C-plane chromia on c-plane sapphire
Tarre, A.
Carlotti, G.
Gerst, A.
Mandar, H.
Niilisk, A.
Sammelselg, V.
Socino, G.
Rosental, A.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6, 2009, 6 (06): : 1472 - +
[8] Epitaxial AlN on c-plane sapphire by plasma nitriding
Chen, Yi-Chun
Chang, Li
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SC)
[9] Control of in-plane epitaxial relationship of c-plane AlN layers grown on a-plane sapphire substrates by hydride vapor phase epitaxy
Tajima, Jumpei
Togashi, Rie
Murakami, Hisashi
Kumagai, Yoshinao
Takada, Kazuya
Koukitu, Akinori
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2028 - 2030
[10] Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate
Nakagomi, Shinji
Kokubun, Yoshihiro
JOURNAL OF CRYSTAL GROWTH, 2012, 349 (01) : 12 - 18

← 1 2 3 4 5 →